Two-step in situ annealing effects on sputter-deposited MgB2 thin films

被引：13

作者：

Mori, Z ^{[1
]}

Doi, T

Eitoku, K

Ishizaki, Y

Kitaguchi, H

Okada, M

Saitoh, K

Hakuraku, Y

机构：

[1] Yatsushiro Natl Tech Coll, Kumamoto 8668501, Japan

[2] Kagoshima Univ, Fac Engn, Kagoshima 8900065, Japan

[3] NIMS, Tsukuba, Ibaraki 3050047, Japan

[4] Hitachi Ltd, Hitachi Res Lab, Hitachi, Ibaraki 3191292, Japan

[5] Hitachi Ltd, Adv Res Lab, Kokubunji, Tokyo 1858601, Japan

来源：

SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 2004年 / 17卷 / 01期

关键词：

D O I：

10.1088/0953-2048/17/1/008

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the effects of in situ annealing on the superconducting C properties of MgB2 thin films for the purpose of obtaining high critical temperature close to bulk value. MgB2 thin films were fabricated by rf magnetron sputtering on C-plane sapphire (Al2O3) substrate. Thin films In were produced by simultaneously sputtering pure B and a Mg metal target. Sputtering deposition was followed by in situ annealing in a high vacuum. To prevent the evaporation of Mg from the film surface, two-step annealing p C, was adopted: the first step is the crystallization stage at low-temperature annealing and the next is an improvement of the film's superconducting properties by annealing at a high temperature. In the optimal annealing process (a thin film is first heated at 600 degreesC for 2 It and then 650 degreesC for 2 h) we have consistently obtained thin films with a zero resistivity temperature of 29 K.

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页码：47 / 50

页数：4

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