The physical chemistry of organic field-effect transistors

被引：424

作者：

Katz, HE ^{[1
]}

Bao, Z ^{[1
]}

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

JOURNAL OF PHYSICAL CHEMISTRY B | 2000年 / 104卷 / 04期

关键词：

D O I：

10.1021/jp992853n

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This review covers fabrication and performance of organic-based field-effect transistors (FETs). The electronic states of organic solids, crystal growth processes, film alignment and morphology, and charge transport mechanisms are discussed. Discontinuities in the active layers and nonidealities in the device behavior are highlighted, and are presented as opportunities for further physical chemistry investigation.

引用

页码：671 / 678

页数：8

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