Position-sensitive single carrier CdZnTe detectors

Single polarity charge sensing on room temperature semiconductor gamma-ray detectors can be achieved by using the coplanar electrode read-out technique. This method can eliminate the hole-trapping problem of the wide band gap semiconductors which are currently available. Our previous results on 5 mm cube CZT defectors confirmed [6] that the energy resolution can be dramatically improved compared with that obtained using the conventional read-out method. This paper explores the application of this technique to CdZnTe detectors of larger volume, namely 1 cm(3). In our previous work, we suggested a method to obtain gamma-ray interaction depth and further progress is reported here. This technique can be used to correct for the electron trapping as a function of distance from the anode. The intrinsic position resolution has been analyzed and energy resolutions of less than 2% FWHM at 662 keV were obtained on both detectors tested. Finally, the factors which inhibit attaining the statistical energy resolution limit of CdZnTe detectors have been explored. These results will be of interest in the design of higher performance, portable and imaging-related, room-temperature semiconductor gamma-ray detectors.