Radiation-induced defect centers in 4H silicon carbide

被引：55

作者：

Dalibor, T

Pensl, G

Kimoto, T

Matsunami, H

Sridhara, S

Devaty, RP

Choyke, WJ

机构：

[1] KYOTO UNIV,DEPT ELECT ENGN,KYOTO 60601,JAPAN

[2] UNIV PITTSBURGH,DEPT PHYS & ASTRON,PITTSBURGH,PA 15260

来源：

关键词：

deep level transient spectroscopy; low temperature photoluminescence; radiation-induced deep defect centers; thermal stability; 4H silicon carbide;

D O I：

10.1016/S0925-9635(97)00108-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Deep level transient spectroscopy (DLTS) and low temperature photoluminescence (LTPL) were applied to investigate radiation-induced defect centers and their thermal stability in 4H silicon carbide (SiC) epilayers grown by chemical vapor deposition (CVD). The epilayers were implanted with He+ ions and annealed at different temperatures. Several deep defect levels were monitored with DLTS in the 4H polytype. The correlation of these centers with photoluminescence lines is discussed with respect to appropriate annealing steps. (C) 1997 Elsevier Science S.A.

引用

页码：1333 / 1337

页数：5

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