Device and process optimization for a low voltage enhancement mode power heterojunction FET for portable applications

被引：2

作者：

Huang, JH

Glass, E

Abrokwah, J

Bernhardt, B

Majerus, M

Spears, E

Parsey, JM

Scheitlin, D

Droopad, R

Mills, LA

Hawthorne, K

Blaugh, J

机构：

来源：

GAAS IC SYMPOSIUM - 19TH ANNUAL, TECHNICAL DIGEST 1997 | 1997年

关键词：

D O I：

10.1109/GAAS.1997.628236

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a true enhancement mode RF power device with state-of-the-art performance operated at 3.5 Volts at 900 MHz. The performance was realized with a technology derived from the digital CGaAs(TM) technology. The necessary device and process optimizations to adapt the digital technology for RF applications are discussed and results presented.

引用

页码：55 / 58

页数：4