Atomic force microscopy analysis of buckling phenomena in metallic thin films on substrates

Atomic force microscopy (AFM) was used to investigate the small blister size metallic thin films on substrates. Results concerning in-plane residual stresses obtained on 200 nm thick Ni and Mo films deposited by ion beam sputtering on polycarbonate and thick silicon substrates respectively, are presented. Results are compared to the average in-plane stress deduced in films adherent to a thin silicon substrate from the curvature of the substrate according to Stanley formula.