Electronic states of sulfur doped TiO2 by first principles calculations

被引:29
作者
Yamamoto, T [1 ]
Yamashita, F
Tanaka, I
Matsubara, E
Muramatsu, A
机构
[1] Kyoto Univ, Fukui Inst Fundamental Chem, Kyoto 6068103, Japan
[2] Tohoku Univ, Dept Mat Sci, Grad Sch Engn, Sendai, Miyagi 9808579, Japan
[3] Kyoto Univ, Dept Mat Sci & Engn, Kyoto 6068501, Japan
[4] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[5] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Sendai, Miyagi 9808577, Japan
关键词
first principles calculations; titanium dioxide; sulfur; solutes; band gap;
D O I
10.2320/matertrans.45.1987
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
First principles calculations of rutile-type TiO2:S have been performed to investigate the effect of sulfur solutes on the electronic structure. Plane-wave pseudopotentials method has been employed and atomic relaxations were fully taken into account. All possible geometric configurations for sulfur solutes within a 12-atoms supercell have been examined changing sulfur concentration of x = 0, 0.25, 0.5. 0.75 and 1. Theoretical direct band gap is found to decrease as sulfur concentration is increased. The dependence on the sulfur concentration is weaker than that was predicted in literature. Both the optimization of solute configuration and atomic relaxation are found to be essential for quantitative evaluation of the electronic structures in the alloy.
引用
收藏
页码:1987 / 1990
页数:4
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