Fabrication and properties of amorphous hydrogenated boron carbide films

被引：12

作者：

Anan'ev, AS

Kon'kov, OI

Lebedev, VM

Novokhatski, AN

Terukov, EI

Trapeznikova, IN

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Russian Acad Sci, BP Konstantinov Nucl Phys Inst, Gatchina 188350, St Petersburg, Russia

来源：

SEMICONDUCTORS | 2002年 / 36卷 / 08期

关键词：

D O I：

10.1134/1.1500477

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Boron carbide films were grown using glow discharge decomposition of C2B10H12 powder sublimation products. The film composition found as a-B0.52C0.48:H using nuclear reaction and infrared spectroscopy techniques was shown to depend weakly on the discharge gas (Ar or He) and the substrate temperature (20-100degreesC). The optical band gap was found to be about 3.8 eV; the resistivity varied from 10(6) to 10(5) Omega cm as the substrate temperature increased. Weak photoluminescence with a peak at 475 nm indicates that there is an acceptor level in the band gap which correlates with the conduction activation energy. (C) 2002 MAIK "Nauka / Interperiodica".

引用

页码：941 / 943

页数：3

共 12 条

[1] IR ABSORPTION OF AMORPHOUS BORON FILMS CONTAINING CARBON AND HYDROGEN [J].

BLUM, NA ;

FELDMAN, C ;

SATKIEWICZ, FG .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 41 (02) :481-486

[2] Analysis of a-BxCy:Hz coatings with IBA techniques [J].

Giorginis, G ;

Persson, L ;

Hult, M ;

Crametz, A ;

Lugscheider, E ;

Siry, CW .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 136 :258-262

[3] Globus-M spherical tokamak [J].

Gusev, VK ;

Golant, VE ;

Gusakov, EZ ;

D'yachenko, VV ;

Irzak, MA ;

Minaev, VB ;

Mukhin, EE ;

Novokhatskii, AN ;

Podushnikova, KA ;

Razdobarin, GT ;

Sakharov, NV ;

Tregubova, EN ;

Uzlov, VS ;

Shcherbinin, ON ;

Belyakov, VA ;

Kavin, AA ;

Kostsov, YA ;

Kuz'min, EG ;

Soikin, VF ;

Kuznetsov, EA ;

Yagnov, VA .

TECHNICAL PHYSICS, 1999, 44 (09) :1054-1057

[4]

GUSEV VK, 2000, P 18 FUS EN C SOR

[5]

Konkov OI, 1996, SEMICONDUCTORS+, V30, P1138

[6] Boron carbide icosahedra and the 1280 cm-1 line in amorphous hydrogenated boron carbide [J].

Lin, SH ;

Feldman, BJ .

SOLID STATE COMMUNICATIONS, 1998, 107 (05) :239-242

[7] A comparative analysis of a-C:H by infrared spectroscopy and mass selected thermal effusion [J].

Ristein, J ;

Stief, RT ;

Ley, L ;

Beyer, W .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3836-3847

[8] BORONIZATION OF RUSSIAN TOKAMAKS FROM CARBORANE PRECURSORS [J].

SHARAPOV, VM ;

MIRNOV, SV ;

GRASHIN, SA ;

LEBEDEV, SV ;

KOVAN, IA ;

KRASILNIKOV, AV ;

KRUPIN, VA ;

LEVIN, LS ;

ROMANNIKOV, AN ;

ZAKHAROV, AP .

JOURNAL OF NUCLEAR MATERIALS, 1995, 220 :730-735

[9] INFRARED STUDY OF AMORPHOUS B1-XCX FILMS [J].

SHIRAI, K ;

EMURA, S ;

GONDA, SI ;

KUMASHIRO, Y .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (05) :3392-3400

[10]

SHIRAI K, 1987, P 10 INT S BOR BOR R, P336

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