Charge-Transport Anisotropy Due to Grain Boundaries in Directionally Crystallized Thin Films of Regioregular Poly(3-hexylthiophene)

被引：301

作者：

Jimison, Leslie H.

Toney, Michael F.

McCulloch, Iain ^{[1
]}

Heeney, Martin ^{[2
]}

Salleo, Alberto

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AZ, England

[2] Queen Mary Univ London, London E14 NS, England

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 16期

基金：

美国国家科学基金会;

关键词：

HOLE MOBILITY; SOLIDIFICATION; TEMPERATURE; TRANSISTORS; DEPENDENCE;

D O I：

10.1002/adma.200802722

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

P3HT films that are highly anisotropic inplane are produced using a directional crystallization technique, and the charge-transport properties of grain boundaries between different orientations of crystallites are studied. Boundaries along the fiber provide a small barrier to charge transport when compared to fiber-to-fiber grain boundaries. The films allow a correlation to be drawn between the grain-boundary type and charge-tran sport behavior in P3HT

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收藏

页码：1568 / +

页数：6

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