Terahertz time-domain spectroscopy characterization of the far-infrared absorption and index of refraction of high-resistivity, float-zone silicon

被引：409

作者：

Dai, JM ^{[1
]}

Zhang, JQ ^{[1
]}

Zhang, WL ^{[1
]}

Grischkowsky, D ^{[1
]}

机构：

[1] Oklahoma State Univ, Sch Elect & Comp Engn, Stillwater, OK 74078 USA

来源：

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS | 2004年 / 21卷 / 07期

关键词：

D O I：

10.1364/JOSAB.21.001379

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The far-infrared absorption and index of refraction of high-resistivity, float-zone, crystalline silicon has been measured by terahertz time-domain spectroscopy. The measured new upper limit for the absorption of this most transparent dielectric material in the far infrared shows unprecedented transparency over the range from 0.5 to 2.5 THz and a well-resolved absorption feature at 3.6 THz. The index of refraction shows remarkably little dispersion, changing by only 0.0001 over the range from 0.5 to 4.5 THz. (C) 2004 Optical Society of America.

引用

页码：1379 / 1386

页数：8

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