Dimer buckling induced by single-dimer vacancies on the Si(001) surface near T-c

被引：26

作者：

Yokoyama, T ^{[1
]}

Takayanagi, K ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.56.10483

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We used a low-temperature scanning tunneling microscope to observe a single-dimer vacancy (A-type defect) induce buckling of the dimers on a Si(001) surface near T-c approximate to 200 K. This dimer buckling always occurs in rows adjacent to the A-type defects near T-c, which simultaneously forms an out-of-phase boundary in the domain of a c(4 x 2) structure. However, the out-of-phase boundaries around the A-type defects disappear on the surface at 78 K. We discuss the nucleation and growth behavior of the dimer buckling around the A-type defect and the influence of the defects on the structural phase transition of a Si(001) surface.

引用

收藏

页码：10483 / 10487

页数：5

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