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Detector embedded device for continuous reset of charge amplifiers: choice between bipolar and MOS transistor

被引：12
作者：
Guazzoni, C
Sampietro, M
Fazzi, A
机构：
[1] Politecn Milan, Dipartimento Elettron & Informat, I-20133 Milan, Italy
[2] Politecn Milan, Dipartimento Ingn Nucl, CeSNEF, I-20133 Milan, Italy
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2000年 / 443卷 / 2-3期
关键词：
front-end electronics; charge amplifiers; x-ray detectors; x-ray spectroscopy;
D O I：
10.1016/S0168-9002(99)01152-3
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
This work discusses the criteria for the choice of the reset device in a charge amplifier whose front-end is integrated on high-resolution semiconductor detectors. The performances achievable using a bipolar or a MOS transistor as reset device are compared in terms of the linearity of the response and of the added noise as a function of the detector leakage current. The additional constraints in term of available technology and layout compatibility show the advantages of MOS transistors operated in sub-threshold mode. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：447 / 450
页数：4
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