Zeeman spectroscopy of shallow donors in GaN

被引：56

作者：

Moore, WJ ^{[1
]}

Freitas, JA ^{[1
]}

Molnar, RJ ^{[1
]}

机构：

[1] MIT, LINCOLN LAB, LEXINGTON, MA 02173 USA

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.56.12073

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Gallium nitride grown by hydride vapor phase epitaxy has been studied by-infrared Spectroscopy in the region of donor intrasite electronic excitations as a function of magnetic field and temperature. Infrared-absorption features which are present only when the sample temperature is cooled to near 4 K have been observed. These features are identified as due to 1s-2p(+/-) transitions which split in a magnetic field, and a 1s-2p(0) transition which does not split. A donor effective mass of 0.22m(0) is calculated from the rate of splitting with held. We assume that the lower-energy transition occurs at an effective-mass donor and calculate donor binding energies of 31.1 and 33.8 meV for the two donors observed, and a static dielectric constant of 9.8.

引用

页码：12073 / 12076

页数：4

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