An organic field-effect-transistor based on Langmuir-Blodgett films of a new asymmetrically substituted phthalocyanine, 1,8-naphthaimide-tri-tert-butylphthalocyanine

被引：4

作者：

Hu, WP ^{[1
]}

Liu, YQ ^{[1
]}

Xu, Y ^{[1
]}

Liu, SG ^{[1
]}

Zhou, SQ ^{[1
]}

Zhu, DB ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Chem, Beijing 100080, Peoples R China

来源：

MOLECULAR CRYSTALS AND LIQUID CRYSTALS SCIENCE AND TECHNOLOGY SECTION A-MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 1999年 / 337卷

关键词：

phthalocyanine; Langmuir-Blodgett films; field-effect transistor;

D O I：

10.1080/10587259908023489

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The Langmuir-Blodgett films of 1,8-naphthaimide-tri-tert-butylphthalocyanine were prepared, which can be used as the semiconductor thin layers of organic field-effect transistor (FET), functioned as a p-channel accumulation device with carriers mobility about 2.05 x 10(-5)cm(2)V(-1)s(-1).

引用

页码：511 / 514

页数：4

共 7 条

[1] FABRICATION AND CHARACTERIZATION OF SCHOTTKY GATE POLY(3-ALKYLTHIOPHENE) PLANAR FIELD-EFFECT TRANSISTORS [J].

ASSADI, A ;

WILLANDER, M ;

SVENSSON, C ;

HELLBERG, J .

SYNTHETIC METALS, 1993, 58 (02) :187-193

[2] New air-stable n-channel organic thin film transistors [J].

Bao, ZA ;

Lovinger, AJ ;

Brown, J .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1998, 120 (01) :207-208

[3] Organic molecular solids as thin film transistor semiconductors [J].

Katz, HE .

JOURNAL OF MATERIALS CHEMISTRY, 1997, 7 (03) :369-376

[4] Field-effect transistor with the water-soluble self-acid-doped polyaniline thin films as semiconductor [J].

Kuo, CT ;

Chen, SA ;

Hwang, GW ;

Kuo, HH .

SYNTHETIC METALS, 1998, 93 (03) :155-160

[5] The first two novel phthalocyanine-based dyads [J].

Liu, SG ;

Liu, YQ ;

Xu, Y ;

Jiang, XZ ;

Zhu, DB .

TETRAHEDRON LETTERS, 1998, 39 (24) :4271-4274

[6]

LIU YQ, 1995, J PHYS CHEM-US, V99, P1957

[7] ELECTRONIC AND OPTICAL-PROPERTIES OF CONDUCTING POLYMER THIN-FILMS [J].

STUBB, H ;

PUNKKA, E ;

PALOHEIMO, J .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1993, 10 (03) :85-140

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