Spectroellipsometric study of the sol-gel nanocrystalline ITO multilayer films

被引：24

作者：

Stoica, TF

Gartner, M

Losurdo, M

Teodorescu, V

Blanchin, M

Stoica, T

Zaharescu, M

机构：

[1] Romanian Acad Sci, Inst Chem Phys, Bucharest 77208, Romania

[2] Natl Inst Mat Phys, Bucharest 76900, Magurele, Romania

[3] CNR, Plasma Chem Res Ctr, I-70126 Bari, Italy

[4] Univ Lyon 1, Dept Mat Phys, F-69622 Villeurbanne, France

来源：

THIN SOLID FILMS | 2004年 / 455卷

关键词：

ellipsometry; XTEM; transparent and conductive ITO films; sol-gel method;

D O I：

10.1016/j.tsf.2003.11.251

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tin-doped indium oxide (ITO) thin films have been deposited by sol-gel process using 'sols' of indium and tin isopropoxides. The thickness of one deposited ITO layer is approximately 50 nm. The desired thickness was obtained by 1-5 successive depositions. The XTEM cross-sectional view of an ITO sample with five depositions showed a clear delimitation of the layers with an alternating structure dense/porous ITO layers. The void fraction in porous regions varies between 20 and 25%. Cubic bixbyite In2O3 nanocrystals with size of 10-20 nm and no phases separation of tin oxide were observed. The optical properties of the films have been investigated by optical transmission and spectroscopic ellipsometry. Reliable optical constants and porosity are obtained only with the model of internal structure based on XTEM results. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：509 / 512

页数：4

共 9 条

[1] Optical and electrical properties of transparent conductive ITO thin films deposited by sol-gel process [J].