Polarized optical reflectance and electronic band structure of α′-NaV2O5

被引:30
作者
Long, VC [1 ]
Zhu, Z
Musfeldt, JL
Wei, X
Koo, HJ
Whangbo, MH
Jegoudez, J
Revcolevschi, A
机构
[1] SUNY Binghamton, Dept Chem, Binghamton, NY 13902 USA
[2] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32306 USA
[3] N Carolina State Univ, Dept Chem, Raleigh, NC 27596 USA
[4] Univ Paris Sud, Lab Chim Solides, F-91405 Orsay, France
关键词
D O I
10.1103/PhysRevB.60.15721
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report polarized optical reflectance studies of alpha'-NaV2O5 between 0.5 and 6 eV as a function of temperature (T) and magnetic field (H). The electronic excitations and their polarization dependence are interpreted according to our extended Huckel tight-binding polarized band structure calculations. Strong bands near 1 eV in both chain and rung directions are attributed to V did transitions. Charge transfer excitations are estimated to begin near 3.3 eV and have significant strength at 4.4 eV and above. The reflectance ratios, Delta R(T)=R(T)/R(T=4 K), measured at H=0 and 28 T, reveal broad polarization-dependent changes through the low temperature transition, T-c. Integrated intensities of Delta R features exhibit a second-order transition at 36 K in zero field and at 33+/-1 K in high field, consistent with a spin-Peierls aspect to the phase transition. [S0163-1829(99)06347-X].
引用
收藏
页码:15721 / 15727
页数:7
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