Oxidation of polycrystalline alpha-silicon carbide ceramic

被引:44
作者
Liu, DM
机构
[1] Materials Research Laboratories, Indust. Technol. Research Institute, Chutung, Hsinchu
关键词
D O I
10.1016/S0272-8842(96)00051-X
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Oxidation behaviours and associated flexural strength of pressureless-sintered alpha-SiC ceramic, with Al2O3 and Y2O3 as sintering additives, were investigated in the temperature range of 1200-1350 degrees C at 50 degrees C intervals. The oxidation kinetics typically exhibited a parabolic behaviour which indicated a diffusion controlled mechanism with an activation energy ranging from 128 kJ/mol to 92 kJ/mol, decreasing monotonically with increasing additive content from 5 wt% to 20 wt%. The oxide scale was characterized in terms of microstructure and phase formation. The scale is essentially a composite structure consisting of pores, crystalline yttrium silicate and YAG phases, and amorphous silica. The flexural strength of the SiC decreases somewhat with oxidation due primarily to surface pit formation. The microstructure, particularly the initial surface morphology, of the SIC with higher additive content may also be considered as an important factor for strength behaviour after oxidation at elevated temperatures. (C) 1997 Elsevier Science Limited and Techna S.r.l.
引用
收藏
页码:425 / 436
页数:12
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