Amorphous silicon thin-film transistors-based active-matrix organic light-emitting displays for medical Imaging

被引：4

作者：

Kim, JH ^{[1
]}

Kanicki, J ^{[1
]}

机构：

[1] Univ Michigan, Dept EECS, Solid State Elect Lab, Ann Arbor, MI 48109 USA

来源：

MEDICAL IMAGING 2002: VISUALIZATION, IMAGE-GUIDED PROCEDURES, AND DISPLAY | 2002年 / 4681卷

关键词：

TFT; AM-OP-LED; amorphous silicon; active-matrix; pixel design; fabrication; circuit simulation; organic polymer; light-emitting diode;

D O I：

10.1117/12.466933

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

We have developed three hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs)-based pixel electrode circuits for active-matrix organic polymer light-emitting displays (AM-OP-LEDs). Our 3- a-Si:H TFTs voltage driven pixel electrode circuits can supply a continuous output current for AM-OP-LEDs. Each pixel circuit has compensation circuits that can adjusts for the OP-LED and a-Si:H TFTs electrical characteristics shift. This pixel electrode circuit fabricated in our laboratory had the driving output current level of 1.13 muA that is equivalent to a pixel current density of over 20 mA/cm(2). The display brightness of similar to4500 cd/m(2) for green light (540 nm) can be achieved with this type of pixel electrode circuits for the organic polymer light-emitting devices having an external quantum efficiency of 5%.

引用

页码：314 / 321

页数：2