Probing of the electric field distribution in organic field effect transistor channel by microscopic second-harmonic generation

被引：92

作者：

Manaka, Takaaki ^{[1
]}

Lim, Eunju ^{[1
]}

Tamura, Ryosuke ^{[1
]}

Yamada, Daisuke ^{[1
]}

Iwamoto, Mitsumasa ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 07期

关键词：

D O I：

10.1063/1.2335370

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electric field distribution in channel of pentacene field effect transistor (FET) was successfully probed by microscopic optical second-harmonic generation (SHG) observation. Microspot SHG signals were acquired at various points in the channel with scanning a spot position along source-drain direction. For the FET at off state, enhanced SHG signal was observed, indicating the Laplace field formation reflecting the device geometry. This clearly supports the insulating nature of pentacene layer at off state. After turning on the FET, SHG profile changed drastically, indicating change in the field distribution by the space charge formation in the channel due to the carrier injection. (c) 2006 American Institute of Physics.

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页数：3

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