Temperature dependence of the fundamental absorption edge in Cu2GeSe3

被引：32

作者：

Marcano, G ^{[1
]}

Nieves, L ^{[1
]}

机构：

[1] Univ Los Andes, Fac Ciencias, Dept Fis, Ctr Estudios Semicond,Lab Temp Najas, Merida 5101, Venezuela

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 03期

关键词：

D O I：

10.1063/1.372010

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependence of the energy gap E-G in Cu2GeSe3 has been obtained from optical absorption measurements in the temperature range from 10 to 300 K. X-ray powder diffraction analysis indicates that the compound crystallizes in an orthorhombic structure with the unit cell parameters a = 11.878(8), b = 3.941(3), and c = 5.485(3) Angstrom. The data were analyzed by considering several models reported in the literature for the variation of E-G vs T. The best fit was obtained by using an expression proposed by Passler [Phys. Status Solidi B 200, 155 (1997)]. From the analysis, the Debye temperature was estimated to be around 170 K. Also obtained was the fact that the effective energy of phonons that participate in the shift of the band gap with temperature is about 15 meV and corresponds to the acoustic phonon branch. (C) 2000 American Institute of Physics. [S0021-8979(00)09901-1].

引用

页码：1284 / 1286

页数：3

共 14 条

[1]

Berger L.T., 1969, TERNARY DIAMOND LIKE, P55

[2]

BERGER LI, 1964, IZV AN SSSR FIZ, V28, P1100

[3] INDEXING OF POWDER DIFFRACTION PATTERNS FOR LOW-SYMMETRY LATTICES BY THE SUCCESSIVE DICHOTOMY METHOD [J].