Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy

被引：33

作者：

Aarts, IMP ^{[1
]}

Hoex, B ^{[1
]}

Smets, AHM ^{[1
]}

Engeln, R ^{[1
]}

Kessels, WMM ^{[1
]}

van de Sanden, MCM ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 16期

关键词：

D O I：

10.1063/1.1713047

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cavity ringdown spectroscopy has been applied to hydrogenated amorphous silicon (a-Si:H) showing that this fully optical method is suited for the detection of defect-related absorption in thin films with a minimal detectable absorption of 1x10(-6) per laser pulse and without the need for a calibration procedure. Absolute absorption coefficient spectra for photon energies between 0.7 and 1.7 eV have been obtained for thin a-Si:H films (4-98 nm) revealing a different spectral dependence for defects located in the bulk and in the surface/interface region of a-Si:H. (C) 2004 American Institute of Physics.

引用

页码：3079 / 3081

页数：3

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