Very high growth rate chemical vapor deposition of single-crystal diamond

被引:226
作者
Yan, CS
Vohra, YK
Mao, HK
Hemley, RJ [1 ]
机构
[1] Univ Alabama, Dept Phys, Birmingham, AL 35294 USA
[2] Carnegie Inst Washington, Geophys Lab, Washington, DC 20015 USA
关键词
D O I
10.1073/pnas.152464799
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Diamond possesses extraordinary material properties, a result that has given rise to a broad range of scientific and technological applications. This study reports the successful production of high-quality single-crystal diamond with microwave plasma chemical vapor deposition (MPCVD) techniques. The diamond single crystals have smooth, transparent surfaces and other characteristics identical to that of high-pressure, high-temperature synthetic diamond. In addition, the crystals can be produced at growth rates from 50 to 150 mum/h, which is up to 2 orders of magnitude higher than standard processes for making polycrystalline MPCVD diamond. This high-quality single-crystal MPCVD diamond may find numerous applications in electronic devices as high-strength windows and in a new generation of high-pressure instruments requiring large single-crystal anvils.
引用
收藏
页码:12523 / 12525
页数:3
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