Relationship between sp2 carbon content and E04 optical gap in amorphous carbon-based materials

被引：65

作者：

Oppedisano, C ^{[1
]}

Tagliaferro, A

机构：

[1] Politecn Torino, Dept Phys, Turin, Italy

[2] Politecn Torino, INFM Unit, Turin, Italy

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 23期

关键词：

D O I：

10.1063/1.125417

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A decreasing trend of the optical gap E-04 with increasing sp(2) carbon content has been noticed in amorphous carbon thin films. This behavior is common to materials grown using different deposition methods and having different composition and local structure. The use of a model of density of states in which the pi bands are assumed to be Gaussian shaped allows us to explain such behavior, once the role of network distortion and hydrogen content in determining the width of the bands is taken into account. (C) 1999 American Institute of Physics. [S0003-6951(99)01149-3].

引用

页码：3650 / 3652

页数：3

共 13 条

[1]

ANGUS JC, 1986, PLASMA DEPOSITED THI, pCH4

[2]

CODY GD, 1984, SEMICONDUCT SEMIMET, V21, P11

[3] PI-BANDS AND GAP STATES FROM OPTICAL-ABSORPTION AND ELECTRON-SPIN-RESONANCE STUDIES ON AMORPHOUS-CARBON AND AMORPHOUS HYDROGENATED CARBON-FILMS [J].