Influence of NH3-plasma pretreatment before Si3N4 passivation film deposition on current collapse in AlGaN/GaN-HEMTs

被引：4

作者：

Hoshi, Shinichi ^{[1
]}

Marui, Toshiharu ^{[1
]}

Itoh, Masanori ^{[1
]}

Sano, Yoshiaki ^{[1
]}

Seki, Shouhei ^{[1
]}

机构：

[1] Oki Elect Ind Co Ltd, Ctr Corp Res & Dev, Hachioji, Tokyo 1938550, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2006年 / E89C卷 / 07期

关键词：

AlGaN/GaN-HEMTs; current collapse; Si3N4 passivation film; NH3-plasma pretreatment;

D O I：

10.1093/ietele/e89-c.7.1052

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In AlGaN/GaN high electron mobility transistors (HEMTs), Si3N4 passivation film brings effective improvements in the current collapse phenomenon, however, the suppression of this phenomenon in a high voltage operation can not be achieved in only the Si3N4 deposition process. In order to solve this problem, we have demonstrated an NH3- plasma surface pretreatment in the chamber of plasma enhanced chemical vapor deposition (PE-CVD) just before Si3N4 deposition process. We found that the optimized NH3-plasma pretreatment could improve the current collapse as compared with only the Si3N4 deposition and an excessive pretreatment made it worse adversely in AlGaN/GaN-HEMTs. It was confirmed by Auger electron spectroscopy (AES) analysis that the optimized NH3-plasma pretreatment decreased the carbon contamination such as hydrocarbon on the AlGaN surface and the excessive pretreatment degraded the stoicheiometric composition of AlGaN surface.

引用

页码：1052 / 1056

页数：5

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