Radiation hardness of ZnO at low temperatures

被引：113

作者：

Coskun, C ^{[2
]}

Look, DC

Farlow, GC

Sizelove, JR

机构：

[1] Ataturk Univ, Dept Phys, TR-25240 Erzurum, Turkey

[2] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

[3] USAF, Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA

[4] Wright State Univ, Dept Phys, Dayton, OH 45435 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 06期

关键词：

D O I：

10.1088/0268-1242/19/6/016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In situ Hall-effect measurements have been carried out on vapour-phase-grown, n-type ZnO irradiated with 1.0 and 1.5 MeV electrons in the [000-1] direction. The electrical properties change very little during irradiation at temperatures as low as 130 K, the lowest temperature presently attainable under 1 MeV, 0.3 muA cm(-2) irradiation. It is concluded that long-term damage in ZnO is limited by defect annihilations that are rapid on the time scale of the experiment (<1 min), even at 130 K.

引用

页码：752 / 754

页数：3

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