Termination Dependence of Tetragonal CH3NH3PbI3 Surfaces for Perovskite Solar Cells

被引:330
作者
Haruyama, Jun [1 ,2 ]
Sodeyama, Keitaro [1 ,3 ]
Han, Liyuan [4 ,5 ,6 ]
Tateyama, Yoshitaka [1 ,3 ,5 ,6 ]
机构
[1] NIMS, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan
[2] NIMS, Global Res Ctr Environm & Energy Nanosci GREEN, Tsukuba, Ibaraki 3050044, Japan
[3] Kyoto Univ, Elements Strategy Initiat Catalysts & Batteries, Nishikyo Ku, Kyoto 6158245, Japan
[4] NIMS, Photovolta Mat Unit, Tsukuba, Ibaraki 3050047, Japan
[5] Japan Sci & Technol Agcy JST, PRESTO, Kawaguchi, Saitama 3330012, Japan
[6] Japan Sci & Technol Agcy JST, CREST, Kawaguchi, Saitama 3330012, Japan
来源
JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2014年 / 5卷 / 16期
关键词
LEAD IODIDE PEROVSKITE; HIGH-PERFORMANCE; LOW-COST; PSEUDOPOTENTIALS; TRANSPORT; LENGTHS;
D O I
10.1021/jz501510v
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We investigated the termination dependence of structural stability and electronic states of the representative (110), (001), (100), and (101) surfaces of tetragonal CH3NH3PbI3 (MAPbI(3)), the main component of a perovskite solar cell (PSC), by density functional theory calculations. By examining various types of PbIx polyhedron terminations, we found that a vacant termination is more stable than flat termination on all of the surfaces, under thermodynamic equilibrium conditions of bulk MAPbI(3). More interestingly, both terminations can coexist especially on the more probable (110) and (001) surfaces. The electronic structures of the stable vacant and PbI2-rich flat terminations on these two surfaces largely maintain the characteristics of bulk MAPbI(3) without midgap states. Thus, these surfaces can contribute to the long carrier lifetime actually observed for the PSCs. Furthermore, the shallow surface states on the (110) and (001) flat terminations can be efficient intermediates of hole transfer. Consequently, the formation of the flat terminations under the PbI2-rich condition will be beneficial for the improvement of PSC performance.
引用
收藏
页码:2903 / 2909
页数:7
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