Transient enhanced diffusion of Sb and B due to MeV silicon implants

被引：46

作者：

Eaglesham, DJ ^{[1
]}

Haynes, TE ^{[1
]}

Gossmann, HJ ^{[1
]}

Jacobson, DC ^{[1
]}

Stolk, PA ^{[1
]}

Poate, JM ^{[1
]}

机构：

[1] OAK RIDGE NATL LAB,OAK RIDGE,TN 37831

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 24期

关键词：

D O I：

10.1063/1.119150

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si+ ion implants at very high doses (approximate to 10(16) cm(-2)). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation (approximate to 700 at 740 degrees C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of {311} defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an interstitial supersaturation is present at the same time. We discuss possible mechanisms for a simultaneous supersaturation of both types of point defects. (C) 1997 American Institute of Physics.

引用

页码：3281 / 3283

页数：3

共 12 条

[1] Species and dose dependence of ion implantation damage induced transient enhanced diffusion [J].