Anomalous large thermoelectric power of the Si and Au doped Ge superlattice thin film

被引：39

作者：

Okamoto, Y ^{[1
]}

Uchino, H ^{[1
]}

Kawahara, T ^{[1
]}

Morimoto, J ^{[1
]}

机构：

[1] Natl Def Acad, Dept Mat Sci & Engn, Kanagawa 2398686, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 8B期

关键词：

thermoelectrics; superlattice; power factor; SiGe; thin film;

D O I：

10.1143/JJAP.38.L945

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thermoelectric properties of superlattice thin films have been studied as functions of temperature. The superlattice thin films were prepared by the alternate deposition of Si and Ge heavily doped with Au in ultrahigh vacuum. They have an intended artificial interval, but each layer is in an amorphous state. An anomalously large thermoelectric power and power factor is observed. The power factor reaches a maximum value of approximately 7 W/mK(2) at around 800 K, which is anomalously large compared to that for conventional bulk materials.

引用

页码：L945 / L947

页数：3

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