A theoretical investigation on the chemical bonding of interstitial and vacancy defects in silicon during their migration

被引：4

作者：

Cargnoni, F

Colombo, L

Gatti, C

机构：

[1] UNIV MILAN,DIPARTIMENTO FIS,I-20113 MILAN,ITALY

[2] INFM,I-20113 MILAN,ITALY

[3] UNIV MILAN,DIPARTIMENTO CHIM FIS & ELETTROCHIM,I-20133 MILAN,ITALY

[4] CNR,CTR STUDIO RELAZ STRUTTURA & REATT CHIM,I-20133 MILAN,ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1997年 / 127卷

关键词：

D O I：

10.1016/S0168-583X(96)00890-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

By combining tight-binding molecular dynamics and restricted Hartree-Fock calculations we present a quantitative picture for chemical bond in silicon when point defects are present.

引用

页码：235 / 238

页数：4

共 8 条

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