Spatial distribution of minority-carrier lifetime and local concentration of impurities in multicrystalline silicon solar cells

被引：8

作者：

Kurobe, K ^{[1
]}

Miura, M ^{[1
]}

Hirano, K ^{[1
]}

Matsunami, H ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2002年 / 74卷 / 1-4期

关键词：

multicrystalline silicon; solar cell; lifetime; distribution; grain boundary; SIMS; iron; segregation;

D O I：

10.1016/S0927-0248(02)00063-6

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Spatial distribution of minority-carrier lifetime (tau) in multicrystalline silicon solar cells was investigated. By mapping of tau, a wide distribution in a higher-efficiency cell and a narrow distribution in a lower-efficiency cell was found, respectively. Based on the relation between tau and the density of grain boundaries, spatial distribution of impurities was characterized by secondary ion mass spectrometry. To clarify the spatial profile near grain boundaries, a method of changing detection area was carried out. Iron (Fe) segregation within 100 mum around a grain boundary was observed. In the lower-efficiency cell, a measurable amount of Fe was contained in a crystalline area as well. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：183 / 193

页数：11

共 4 条

[1]

FUJII S, 1999, PVSEC, V11, P123

[2] TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIME IN IRON-DIFFUSED P-TYPE SILICON-WAFERS [J].

HAYAMIZU, Y ;

HAMAGUCHI, T ;

USHIO, S ;

ABE, T ;

SHIMURA, F .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (05) :3077-3081

[3] SWITCHING TIME IN JUNCTION DIODES AND JUNCTION TRANSISTORS [J].

KINGSTON, RH .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (05) :829-834

[4] A 19.8% efficient honeycomb multicrystalline silicon solar cell with improved light trapping [J].

Zhao, JH ;

Wang, AH ;

Campbell, P ;

Green, MA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (10) :1978-1983

← 1 →