Detection of single photons using a field-effect transistor gated by a layer of quantum dots

被引：130

作者：

Shields, AJ

O'Sullivan, MP

Farrer, I

Ritchie, DA

Hogg, RA

Leadbeater, ML

Norman, CE

Pepper, M

机构：

[1] Toshiba Res Europe Ltd, Cambridge CB4 0WE, England

[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 25期

关键词：

D O I：

10.1063/1.126745

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate that the conductance of a field-effect transistor (FET) gated by a layer of nanometer-sized quantum dots is sensitive to the absorption of single photons. Rather than relying upon an avalanche process, as in conventional semiconductor single-photon detectors, the gain in this device derives from the fact that the conductivity of the FET channel is very sensitive to the photoexcited charge trapped in the dots. This phenomenon may allow a type of three-terminal single-photon detector to be developed based upon FET technology. (C) 2000 American Institute of Physics. [S0003-6951(00)01525-4].

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页码：3673 / 3675

页数：3

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