Quasiparticle lifetimes and tunnel times in SIS junctions for X-ray spectroscopy

被引：8

作者：

Luiten, OJ

vanLieshout, HL

Michels, FA

Valko, P

Bruijn, MP

Kiewiet, F

deKorte, PAJ

Adelerhof, DJ

Hamster, AW

Brons, CGS

Flokstra, J

机构：

[1] UNIV TWENTE,DEPT APPL PHYS,7500 AE ENSCHEDE,NETHERLANDS

[2] SRON,SPACE RES UTRECHT,3584 CA UTRECHT,NETHERLANDS

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1996年 / 370卷 / 01期

关键词：

D O I：

10.1016/0168-9002(95)01052-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The quasiparticle lifetimes and tunneltimes in SIS tunnel junctions are essential parameters in the development of these devices for high resolution X-ray spectroscopy. We present a simple analytical model which allows us to calculate both the risetime and the total charge of the integrated tunnel current following an X-ray event. Simultaneous measurement of both the total charge and the risetime thus becomes a useful diagnostic tool for quantitative analysis. We have applied the model to recent X-ray measurements on a Nb/AlOx SIS junction. We find that the energy resolution achieved in this device is mainly limited by variations in the thickness of the counter electrode.

引用

页码：72 / 74

页数：3

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