Quantum interference patterns and electron confinement on a two-dimensional metal:: A scanning tunneling microscopy study -: art. no. 155407

被引:13
作者
Brihuega, I [1 ]
Mallet, P
Magaud, L
Pons, S
Custance, O
Gómez-Rodríguez, JM
Veuillen, JY
机构
[1] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain
[2] CNRS, Etud Proprietes Elect Solides Lab, F-38042 Grenoble 9, France
关键词
D O I
10.1103/PhysRevB.69.155407
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have investigated by scanning tunneling microscopy (STM) the electronic structure of a monolayer thick metallic film grown on top of a semiconducting substrate. In this system, which should behave as a true two-dimensional metal in the vicinity of the Fermi level, we have observed standing-wave patterns at low sample bias. The analysis of the modulations of the local density of states inside elongated resonators as a function of the bias shows that we probe a dispersive surface state with downward dispersion. The present STM results are in excellent agreement with previously reported photoemission data and with our band-structure ab initio calculations.
引用
收藏
页码:155407 / 1
页数:4
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