From ferromagnetic to antiferromagnetic interactions in n-type Zn1-xMnxO:: An electron paramagnetic resonance study

被引：48

作者：

Ben Mahmoud, A.

von Bardeleben, H. J.

Cantin, J. L.

Mauger, A.

Chikoidze, E.

Dumont, Y.

机构：

[1] Univ Paris 06, Inst NanoSci Paris, UMR 7588, CNRS, F-75015 Paris, France

[2] Univ Paris 07, Inst NanoSci Paris, UMR 7588, CNRS, F-75015 Paris, France

[3] Fac Sci Tunis, Lab Phys Mat & Nanomat Appl Environm, Gabes, Tunisia

[4] CNRS, Dept Math Informat Phys Planete & Univers, F-75015 Paris, France

[5] Univ Versailles St Quentin Yvelines, Lab Phys Solides & Cristallogenese, CNRS, F-92195 Meudon, France

来源：

PHYSICAL REVIEW B | 2006年 / 74卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.74.115203

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Contradictory results concerning the formation of a ferromagnetic state in Mn doped ZnO layers have been reported in the last years. We present the results of an electron paramagnetic resonance study on homogeneous single phase n-type conductive Zn1-xMnxO (x < 0.07) thin films. Based on the observation of the existence of a narrow Mn composition range, x < 0.05, where a ferromagnetic interaction is dominant, whereas for larger x nearest neighbor antiferromagnetic interactions dominate, we propose a magnetic polaron model for the ferromagnetic Mn-Mn interaction in n-type films.

引用

页数：5

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