Optical properties of bulk AlGaAs

被引:14
作者
Zheng, J [1 ]
Lin, CH [1 ]
Kuo, CH [1 ]
机构
[1] ARIZONA STATE UNIV,CTR SOLID STATE ELECT RES,DEPT ELECT ENGN,TEMPE,AZ 85287
关键词
D O I
10.1063/1.365774
中图分类号
O59 [应用物理学];
学科分类号
摘要
An analytical semiempirical model is presented for the dielectric function epsilon (E) = epsilon(1)(E) + i epsilon(2)(E) of bulk AlGaAs. The imaginary part of the dielectric function epsilon(2)(E) is calculated based on a simplitied model of band structure and the real part of the dielectric function epsilon(1)(E) is calculated from epsilon(2)(E) by directly integrating the Kramers-Kronig relation. The discrepancy between the calculated refractive index and experimental data for GaAs is less than 0.4% for photon energies from 1.35 to 1.8 eV. (C) 1997 American Institute of Physics.
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页码:792 / 797
页数:6
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