Time-resolved photoluminescence in ZnO epitaxial thin films studied by up-conversion method

被引：38

作者：

Yamamoto, A ^{[1
]}

Kido, T

Goto, T

Chen, YF

Yao, TF

Kasuya, A

机构：

[1] Tohoku Univ, Grad Sch Sci, Aoba Ku, Sendai, Miyagi 9808578, Japan

[2] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

[3] Tohoku Univ, Interdisciplinary Res Ctr, Aoba Ku, Sendai, Miyagi 9808579, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 214卷

关键词：

time-resolved photoluminescence; ZnO; up-conversion;

D O I：

10.1016/S0022-0248(00)00098-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Time-resolved photoluminescence (PL) of ZnO epitaxial thin films has been measured by using an up-conversion method at room temperature. The time-integrated PL spectrum has one dominant peak at similar to 3.14eV which originates from electron-hole plasma (EHP). The rise and decay times of the PL strongly depend on the monitored photon energy. The observed photon energy dependence of the time-resolved PL are thought to be due to the recombination of hot carriers during the cooling process, the accumulation process of the carriers from the bottom of the band and the radiative recombination of EHP state. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：308 / 311

页数：4

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