Strain-induced quantum ring hole states in a gated vertical quantum dot

被引：9

作者：

Liu, J ^{[1
]}

Zaslavsky, A

Freund, LB

机构：

[1] Brown Univ, Dept Phys, Providence, RI 02912 USA

[2] Brown Univ, Div Engn, Providence, RI 02912 USA

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 89卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.89.096804

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have experimentally investigated the hole states in a gated vertical strained Si/SiGe quantum dot. We demonstrate the inhomogeneous-strain relaxation on the lateral surface creates a ringlike potential near the perimeter of the dot, which can confine hole states exhibiting quantum ring characteristics. The magnetotunneling spectroscopy exhibits the predicted periodicity of energy states in phi/phi(0), but the magnitude of the energy shifts is larger than predicted by simple ring theory. Our results suggest a new way to fabricate and study quantum ring structures.

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收藏

页码：968041 / 968044

页数：4

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