Indirect L to T point optical transition in bismuth nanowires

被引:23
作者
Levin, A. J. [1 ]
Black, M. R. [2 ]
Dresselhaus, M. S. [1 ,3 ]
机构
[1] MIT, Dept Phys, Cambridge, MA 02139 USA
[2] Bandgap Engn Inc, Waltham, MA 02451 USA
[3] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
来源
PHYSICAL REVIEW B | 2009年 / 79卷 / 16期
关键词
bismuth; crystal orientation; Fourier transform spectra; infrared spectra; nanowires; valence bands; TRANSPORT-PROPERTIES; SURFACE;
D O I
10.1103/PhysRevB.79.165117
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An indirect electronic transition from the L point valence band to the T point valence band has been previously observed in Bi nanowires oriented along the [0112] crystalline direction (used by Black and by Reppert ) but not in [1120]-oriented nanowires (used by Cornelius ) or in bulk bismuth. Here we measure the Bi nanowire samples from each of these prior experimental studies on the same Fourier transform infrared apparatus, confirming that the differences are indeed physical and are not associated with the experimental setup. We develop an analytical model for the threshold energy of the indirect L to T point valence-band transition that takes as parameters the nanowire diameter and crystalline orientation. Our model shows good agreement with experimental results, and demonstrates that the nonparabolic nature of the L point bands is essential for calculating the energy of this transition. Finally, we propose a mechanism based on symmetry lowering to explain why this indirect transition is observed for [0112]-oriented but not for [1120]-oriented nanowires.
引用
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页数:10
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