Non-Ohmic conduction in tin dioxide based varistor ceramics

被引:28
作者
Glot, A. B. [1 ]
Skuratovsky, I. A.
机构
[1] Univ Tecnol Mixteca, Div Estudios Posgrado, Huajuapan De Leon 69000, Oaxaca, Mexico
[2] Dnepropetrovsk Natl Univ, Dept Radioelectr, UA-49050 Dnepropetrovsk, Ukraine
关键词
tin dioxide ceramics; electrical properties; non-Ohmic conduction;
D O I
10.1016/j.matchemphys.2005.11.028
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A phenomenological model of non-Ohmic conduction in a ceramic varistor is suggested and it is applied to explain current-voltage characteristics of SnO2-Bi2O3-Co3O4-Nb2O5-Cr2O3 varistor obtained at different temperature. It is assumed that electrical conduction in SnO2 Varistor is controlled by the grain-boundary potential barriers and the barrier height is decreased with electric field. The reasonable agreement between the calculations and the experimental results is found. The assumed decrease of the barrier height (the activation energy of electrical conduction) with electric field is observed experimentally. This model gives a relationship between the current density j and the average electric field E in a form j = sigma(0)Eexp(alpha E). This equation can be used for the approximation of j(E) characteristics of varistors instead of frequently used empirical expression j = BE beta. The nonlinearity factor alpha or the normalized nonlinearity coefficient beta(E) = beta/E-1 congruent to alpha can be used instead of traditional nonlinearity coefficient beta = (E/j)(dj/dE) (electric field E-1 is calculated at current density 10(-3) A cm(-2)). Varistors in a SnO2-Bi2O3-Co3O4-Nb2O5-Cr2O3 system have the highest normalized nonlinearity coefficient beta(E) among SnO2 based varistors known up to now. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:487 / 493
页数:7
相关论文
共 20 条
[1]  
[Anonymous], J ELECTROCHEM SOC
[2]   Analysis of the admittance-frequency and capacitance-voltage of dense SnO2•CoO-based varistor ceramics [J].
Bueno, PR ;
Oliveira, MM ;
Bacelar-Junior, WK ;
Leite, ER ;
Longo, E ;
Garcia-Belmonte, G ;
Bisquert, J .
JOURNAL OF APPLIED PHYSICS, 2002, 91 (09) :6007-6014
[3]  
Glot A.B., 1989, INORGANIC MAT, V25, P322
[4]  
Glot A.B., 1989, ADV VARISTOR TECHNOL, V3, P194
[5]  
GLOT AB, 1974, IAN SSSR NEORG MATER, V10, P2177
[6]  
GLOT AB, 1979, THESIS DNIEPROPETROV
[7]  
GLOT AB, 1991, CERAMICS TODAY TOMOR, P2171
[8]  
GLOT AB, 1977, INORG MATER, V13, P1627
[9]  
Greuter F., 1989, ADV VARISTOR TECHNOL, V3, P31
[10]  
JARZEBSKI ZM, 1976, J ELECTROCHEM SOC, V123, P199