Sublimation growth of bulk AlN crystals: Materials compatibility and crystal quality

被引：14

作者：

Epelbaum, BM ^{[1
]}

Hofmann, D ^{[1
]}

Bickermann, M ^{[1
]}

Winnacker, A ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Dept Mat Sci 6, DE-91058 Erlangen, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

AlN single crystal; AlN-SiC mixed crystals; bulk growth; crucible material; sublimation growth;

D O I：

10.4028/www.scientific.net/MSF.389-393.1445

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The main problem to be solved for stable growth of bulk pure AlN is the use of a suitable crucible material. Our analysis of the AlN sublimation growth process support the conclusion made by Slack and McNelly that tungsten is the best choice. However, in the real growth reactor tungsten must be combined with other materials to ensure flexible design and sufficient lifetime of the whole system. Compatibility of tungsten with other high-temperature structural and seed materials such as graphite, AlN and SiC is the topic of the present research.

引用

页码：1445 / 1448

页数：4

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