Electron beam lithography over topography

被引：3

作者：

Bauch, L

Jagdhold, U

Bottcher, M

机构：

[1] Inst. Halbleiterphysik Frankfurt O., 15230 Frankfurt (Oder)

来源：

MICROELECTRONIC ENGINEERING | 1996年 / 30卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(95)00193-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An investigation of electron beam lithography will be presented to structure resist over a topographical surface of a metallization layer. The investigation shows the influence of different accelerating voltages (2.5 and 20 kV) on resist profiles over topographical steps. Simulation methods are used to illustrate the experimental behaviour.

引用

页码：53 / 56

页数：4

共 5 条

[1]

Bethe H, 1930, ANN PHYS-BERLIN, V5, P325

[2] EMPIRICAL FORMS FOR THE ELECTRON-ATOM ELASTIC-SCATTERING CROSS-SECTIONS FROM 0.1 TO 30 KEV [J].