Critical current density of MgB2 thin IMP films and the effect of interface pinning

被引:4
作者
Choi, EM [1 ]
Gupta, SK
Sen, S
Lee, FS
Kim, HJ
Lee, SK
机构
[1] Pohang Univ Sci & Technol, Dept Phys, Natl Creat Res Initiat Ctr Supercond, Pohang 790784, South Korea
[2] Bhabha Atom Res Ctr, Tech Phys & Prototype Engn Div, Bombay 400085, Maharashtra, India
关键词
D O I
10.1088/0953-2048/17/9/013
中图分类号
O59 [应用物理学];
学科分类号
摘要
Preferentially oriented MgB2 thin films with c-axis normal to the surface have been prepared and characterized for microstructure and transport properties. The magnetic field dependence of superconducting critical current density J(c) has been determined from the magnetization hysteresis (M-H) loops at various temperatures using the Bean's critical state model. High J(c) of these films show their potential for applications. We have also measured the angular dependences of J(c). The angular dependence is seen to be in agreement with the anisotropic Ginzburg-Landau model except that at angles close to the ab plane, increased pinning due to film-substrate interaction is observed. The angular range where interface pinning is effective has been determined by measurement of asymmetry in dissipation on reversal of current for fields applied at angles close to the ab plane.
引用
收藏
页码:S524 / S527
页数:4
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