Atomic force microscopy study of micrometric pattern replica by hot embossing lithography

被引：16

作者：

Ressier, L ^{[1
]}

Martin, C ^{[1
]}

Peyrade, JP ^{[1
]}

机构：

[1] LNMO, INSA, Dept Phys, F-31077 Toulouse 04, France

来源：

MICROELECTRONIC ENGINEERING | 2004年 / 71卷 / 3-4期

关键词：

hot embossing lithography; atomic force microscopy; PMMA; resist flow;

D O I：

10.1016/j.mee.2004.01.036

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strong PolyMethylMetAcrilate (PMMA) resist recoveries, occurring in the centre of micro-scale structures replicated by hot embossing lithography (HEL), have been evidenced after the de-moulding stage. A statistical study by atomic force microscopy clearly reveals that, for a fixed pattern size, the heights and the widths of these recoveries decrease when the imprint temperature goes up and increase with the imprint force up to a critical value before vanishing. It also shows that these resist recoveries increase with the pattern size. This phenomenon is explained qualitatively and quantitatively as a relaxation, during the de-moulding stage, of the elastic stresses stored by the PMMA resist which could not flow during the imprint stage. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：272 / 276

页数：5

共 10 条

[1]

ASHBY MF, 1991, MATERIAUX, V2, P220

[2] Nanoimprint fabrication of micro-rings for magnetization reversal studies [J].