Electrical bistability in electrostatic assemblies of CdSe nanoparticles

被引：68

作者：

Mohanta, Kallol ^{[1
]}

Majee, Swarup K. ^{[1
]}

Batabyal, Sudip K. ^{[1
]}

Pal, Amlan J. ^{[1
]}

机构：

[1] Indian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, W Bengal, India

来源：

JOURNAL OF PHYSICAL CHEMISTRY B | 2006年 / 110卷 / 37期

关键词：

CADMIUM SELENIDE NANOCRYSTALS; LIGHT-EMITTING-DIODES; SEMICONDUCTOR NANOCRYSTALLITES; NONVOLATILE MEMORY; POLYMER; ELECTROLUMINESCENCE; COMPOSITES; PARTICLES; MOLECULES; DEVICES;

D O I：

10.1021/jp0639795

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report electrical bistability in electrostatic assembly of CdSe nanoparticles. We obtained thin films of the nanoparticles via layer-by-layer electrostatic assembly technique, which provided a nanoscale control to tune the thickness. Devices based on such thin films exhibit electrical bistability along with memory phenomenon. The bistability is due to charge confinement in the nanoparticles. Conduction mechanism changes from an injection-dominated to a bulk one during switching from a low-to a high-conducting state. Additionally, results from impedance spectroscopy show that the dielectric constant of the material increases during the transition. Both random-access and read-only memory applications are observed in these systems.

引用

页码：18231 / 18235

页数：5

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