Inhomogeneous electronic state near the insulator-to-metal transition in the correlated oxide VO2

被引：76

作者：

Frenzel, A. ^{[1
]}

Qazilbash, M. M. ^{[1
]}

Brehm, M. ^{[2
,3
]}

Chae, Byung-Gyu ^{[4
]}

Kim, Bong-Jun ^{[4
]}

Kim, Hyun-Tak ^{[4
]}

Balatsky, A. V. ^{[5
,6
]}

Keilmann, F. ^{[7
,8
]}

Basov, D. N. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

[2] Max Planck Inst Biochem, Abt Mol Strukturbiol, D-82152 Munich, Germany

[3] Ctr NanoSci, D-82152 Munich, Germany

[4] Elect & Telecommun Res Inst, IT Convergence & Components Lab, Taejon 305350, South Korea

[5] Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87545 USA

[6] Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA

[7] Max Planck Inst Quantum Opt, Munich Ctr Adv Photon, D-85748 Garching, Germany

[8] Ctr NanoSci, D-85748 Garching, Germany

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 11期

关键词：

FIELD OPTICAL MICROSCOPY; HIGH-TEMPERATURE SUPERCONDUCTORS; ELASTIC LIGHT-SCATTERING; MOTT TRANSITION; THIN-FILMS; BI2SR2CACU2O8+DELTA; DEPOSITION; TIP;

D O I：

10.1103/PhysRevB.80.115115

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the percolative insulator-to-metal transition (IMT) in films of the correlated material vanadium dioxide (VO2). Scattering-type scanning near-field infrared microscopy and atomic force microscopy were used to explore the relationship between the nucleation of metallic regions and the topography in insulating VO2. We demonstrate that the IMT begins within 10 nm from grain boundaries and crevices by using mean curvature and statistical analysis. We also observe coexistence of insulating and metallic domains in a single crystalline grain that points to intrinsic inhomogeneity in VO2 due to competing electronic phases in the IMT regime.

引用

页数：7

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