Infrared spectroscopy of ZnSiN2 single-crystalline films on r-sapphire

被引：20

作者：

Mintairov, A ^{[1
]}

Merz, J

Osinsky, A

Fuflyigin, V

Zhu, LD

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[2] NZ Appl Technol, Woburn, MA 01801 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 18期

关键词：

D O I：

10.1063/1.126394

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter presents a study of optical phonon modes of single-crystalline orthorhombic ZnSiN2 semiconductor epitaxially deposited on r-sapphire. An epitaxial relationship for ZnSiN2 film was found from x-ray diffraction to be (0k0)(ZnSiN2)parallel to(10 (1) over bar 2)(Al2O3) and [100](ZnSiN2)parallel to(1 (2) over bar 10)(Al2O3). Six B-1 optical modes were revealed in 400-1000 cm(-1) range in s-polarized infrared reflectance spectra. This is consistent with the analysis of the phonon symmetry and selection rules presented. The frequencies of the transversal and longitudinal components, phonon damping, and oscillator strengths of the B-1 phonons as well as high frequency dielectric constant epsilon(infinity xx) of the orthorhombic ZnSiN2 were determined. (C) 2000 American Institute of Physics. [S0003-6951(00)00918-9].

引用

页码：2517 / 2519

页数：3

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