Population transfer via stimulated Raman adiabatic passage in a solid

被引:41
作者
Goto, Hayato [1 ]
Ichimura, Kouichi [1 ]
机构
[1] Toshiba Co Ltd, Frontier Res Lab, Corp Res & Dev Ctr, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan
来源
PHYSICAL REVIEW A | 2006年 / 74卷 / 05期
关键词
D O I
10.1103/PhysRevA.74.053410
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report experimental demonstration of population transfer via stimulated Raman adiabatic passage with a rare-earth-ion-doped crystal (Pr3+:Y2SiO5). About 90% of population of a ground level is transferred to another ground level with two pulses whose width is shorter than the lifetime of the excited state. The dependence of transferred population on the delay time of the pulse sequence is also experimentally investigated. The delay-time dependence observed in our experiment is similar to that obtained by numerical simulation.
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页数:8
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