Phase-field simulation of 2-D Ostwald ripening in the high volume fraction regime

被引：133

作者：

Fan, DN

Chen, SP

Chen, LQ ^{[1
]}

Voorhees, PW

机构：

[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

[3] Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87545 USA

[4] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

来源：

ACTA MATERIALIA | 2002年 / 50卷 / 08期

基金：

美国国家科学基金会;

关键词：

phase transformations; Oswald ripening; phase held models;

D O I：

10.1016/S1359-6454(01)00393-7

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

The microstructural evolution and kinetics of Ostwald ripening were studied in the high volume fraction regime by numerically solving the time-dependent Ginzbur-Landau (TDGL) and Cahn-Hilliard equations. It is shown that the growth exponent in is equal to 3. independent of the volume fraction, and the kinetic coefficient k increases as the volume fraction increases. The shape of size distributions changes significantly with increasing volume fraction of the coarsening phase: the skewness changes continuously from negative to positive while the kurtosis decreases in the low fraction regime and increases in the high volume fraction regime. (C) 2002 Acta Materialia Inc. Published by Elsevier Science Ltd. All rights reserved.

引用

页码：1895 / 1907

页数：13

共 42 条

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