Visible photonic band gap engineering in silicon nitride waveguides

被引：53

作者：

Netti, MC ^{[1
]}

Charlton, MDB

Parker, GJ

Baumberg, JJ

机构：

[1] Univ Southampton, Dept Phys & Astron, Southampton SO17 1BJ, Hants, England

[2] Univ Southampton, Dept Elect & Comp Sci, Southampton SO17 1BJ, Hants, England

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 08期

关键词：

D O I：

10.1063/1.125916

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate experimentally the tuning of complete photonic band gaps in patterned silicon nitride waveguides. Transmission measurements were performed using an ultrabroadband high-brightness white light laser continuum, extracting extinction ratios as low as 10(-4) in the gap regions. Angle-resolved measurements show the perfect alignment of the gap around the Gamma-J direction. (C) 2000 American Institute of Physics. [S0003-6951(00)02008-8].

引用

页码：991 / 993

页数：3

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