Kinetic formation and thickening of intergranular amorphous films at grain boundaries in barium titanate

被引:35
作者
Choi, SY [1 ]
Yoon, DY [1 ]
Kang, SJL [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Mat Interface Lab, Taejon 305701, South Korea
关键词
intergranular amorphous film; grain boundary; grain growth; single crystal; barium titanate;
D O I
10.1016/j.actamat.2004.04.026
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Kinetic formation and distribution of amorphous films at grain boundaries during grain growth have been studied in a model ceramic system, BaTiO(3), using single crystal/polycrystal bi-layers. Single crystal containing BaTiO(3) powder compacts with different TiO(2) additions (0.1: 0.4 and 1.0 mol%) were heat-treated at 1250 degreesC for 10 h in H(2) and then annealed at 1350 degreesC, above the eutectic temperature, in air for up to 50 h. During the air-annealing the single crystals grew into fine matrix grains of similar to2.0 mum diameter while no grain growth occurred in the matrix. With the growth of the single crystal, an amorphous film formed at the boundaries between the crystal and the matrix grains, and its thickness increased. As the amount of TiO(2) increased from 0.1 to 1.0 mol%, the film thickness increased about ten times. These experimental results show for the first time that: (i) grain growth in solid-liquid two phase materials can induce the formation and thickening of intergranular amorphous films at dry grain boundaries, and (ii) the film thickening is mainly due to the penetration of liquid pockets at triple junctions into the films formed during grain growth. (C) 2004 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:3721 / 3726
页数:6
相关论文
共 27 条
[1]  
Ackler HD, 1997, J AM CERAM SOC, V80, P1893, DOI 10.1111/j.1151-2916.1997.tb03068.x
[2]  
Ackler HD, 1999, J AM CERAM SOC, V82, P183, DOI 10.1111/j.1151-2916.1999.tb01739.x
[3]   A diffuse interface description of intergranular films in polycrystalline ceramics [J].
Bobeth, M ;
Clarke, DR ;
Wolfgang, P .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1999, 82 (06) :1537-1546
[4]   CONTROLLED CRYSTALLIZATION OF THE AMORPHOUS PHASE IN SILICON-NITRIDE CERAMICS [J].
BONNELL, DA ;
TIEN, TY ;
RUHLE, M .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1987, 70 (07) :460-465
[5]  
Cannon RM, 2000, CERAM TRANS, V118, P427
[6]  
Cannon RM, 1999, Z METALLKD, V90, P1002
[7]   HREM and STEM of intergranular films at zinc oxide varistor grain boundaries [J].
Chiang, YM ;
Wang, H ;
Lee, JR .
JOURNAL OF MICROSCOPY-OXFORD, 1998, 191 :275-285
[8]   THIN GLASS-FILM BETWEEN ULTRAFINE CONDUCTOR PARTICLES IN THICK-FILM RESISTORS [J].
CHIANG, YM ;
SILVERMAN, LA ;
FRENCH, RH ;
CANNON, RM .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1994, 77 (05) :1143-1152
[9]  
CHOI SY, IN PRESS ACTA MAT
[10]   Intergranular amorphous films and dislocations-promoted grain growth in SrTiO3 [J].
Chung, SY ;
Kang, SJL .
ACTA MATERIALIA, 2003, 51 (08) :2345-2354